Semiconductor device including laterally diffused metal-oxide-semiconductor field effect transistor and method for manufacturing the same

ABSTRACT

According to one embodiment, a semiconductor device includes a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, an insulating unit, a void, a gate insulating film and a gate electrode. The second semiconductor region provides on a part of the first semiconductor region. The third semiconductor region provides on one other part of the first semiconductor region. The insulating unit provides on a part of the second semiconductor region. The void provides at a lower part of the insulating unit. The gate insulating film provides on a part of the first semiconductor region between the second semiconductor region and the third semiconductor region. The gate electrode provides on the gate insulating film. A position in a first direction of at least a part of the void is between the insulating unit and the third semiconductor region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromU.S. Provisional Patent Application 62/305,861, filed on Mar. 9, 2016;the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a method for manufacturing the same.

BACKGROUND

For example, a LDMOS (laterally diffused metal-oxide-semiconductorfield-effect transistor) is one semiconductor device. It is desirable toincrease the reliability of the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view illustrating a semiconductordevice according to a first embodiment;

FIG. 2 is a schematic cross-sectional view illustrating anothersemiconductor device according to the first embodiment;

FIG. 3A to FIG. 3E are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductordevice according to the first embodiment;

FIG. 4A to FIG. 4E are schematic cross-sectional views in order of theprocesses, illustrating the other method for manufacturing thesemiconductor device according to the first embodiment;

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, illustrating another method for manufacturing thesemiconductor device according to the first embodiment;

FIG. 6 is a schematic plan view illustrating a semiconductor deviceaccording to a second embodiment;

FIG. 7 is a schematic cross-sectional view illustrating thesemiconductor device according to the second embodiment;

FIG. 8 is a schematic cross-sectional view illustrating a semiconductordevice according to a third embodiment; and

FIG. 9A to FIG. 9D are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductordevice according to the third embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor device includesa first semiconductor region of a first conductivity type, a secondsemiconductor region of a second conductivity type, a thirdsemiconductor region of the first conductivity type, an insulating unit,a void, a gate insulating film and a gate electrode. The secondsemiconductor region provides on a part of the first semiconductorregion. A drain is provided at a part of the second semiconductorregion. The third semiconductor region provides on one other part of thefirst semiconductor region. A source is provided at a part of the thirdsemiconductor region. The insulating unit provides on a part of thesecond semiconductor region. The void provides at a lower part of theinsulating unit. The gate insulating film provides on a part of thefirst semiconductor region between the second semiconductor region andthe third semiconductor region. The gate electrode provides on the gateinsulating film. A position in a first direction of at least a part ofthe void is between the insulating unit and the third semiconductorregion. The first direction is from the drain toward the source.

Embodiment of the invention will be described hereinafter with referenceto the accompanying drawings.

Note that, the drawings are schematic or conceptual. Relations betweenthicknesses and widths of portions, ratios of sizes among the portions,and the like are not always the same as real ones. Even when the sameportions are shown, the portions are sometimes shown in differentdimensions and ratios depending on the drawings. Note that in thespecification and the drawings, components described with reference tothe drawings already referred to are denoted by the same referencenumerals and signs. Detailed description of the components is omitted asappropriate.

First Embodiment

FIG. 1 is a schematic cross-sectional view illustrating a semiconductordevice according to a first embodiment.

As shown in FIG. 1, the semiconductor device 110 according to theembodiment includes a first semiconductor region 11, a secondsemiconductor region 12, a third semiconductor region 13, an insulatingunit 21, a gate insulating film 32, and a gate electrode 31.

The first semiconductor region 11 is of a first conductivity type. Thesecond semiconductor region 12 is of a second conductivity type. Thethird semiconductor region 13 is of the first conductivity type.

The second semiconductor region 12 is provided on a part (a first region11 a) of the first semiconductor region 11. The third semiconductorregion 13 is provided on one other part (a second region 11 b) of thefirst semiconductor region 11. The third semiconductor region 13 isseparated from the second semiconductor region 12. A part (a thirdregion 11 c) of the first semiconductor region 11 is between the secondsemiconductor region 12 and the third semiconductor region 13.

Although the description hereinbelow uses an example in which the thirdsemiconductor region 13 is separated from the second semiconductorregion 12, the third semiconductor region may contact the secondsemiconductor region 12. In such a case, the third region 11 c is aportion including an interface between the third semiconductor region 13and the second semiconductor region 12.

The insulating unit 21 is provided on a part (a fourth region 12 a) ofthe second semiconductor region 12.

The gate insulating film 32 is provided on the third region 11 c (theportion positioned between the second semiconductor region 12 and thethird semiconductor region 13) of the first semiconductor region 11. Thegate electrode 31 is provided on the gate insulating film 32.

The first semiconductor region 11 is, for example, an epitaxial layer.The second semiconductor region 12 is, for example, a drift layer. Thethird semiconductor region 13 is, for example, a diffusion layer.

A direction from the first semiconductor region 11 (e.g., the thirdregion 11 c) toward the gate electrode 31 is taken as a Z-direction. Onedirection crossing the Z-direction is taken as an X-direction. Adirection crossing the Z-direction and the X-direction is taken as aY-direction.

A lower end 21L of the insulating unit 21 includes a first end portion21 sa and a first opposite end portion 21 sb. The first end portion 21sa is the end portion on the third semiconductor region 13 side. Thefirst opposite end portion 21 sb is the end portion on the side oppositeto the first end portion 21 sa. The first opposite end portion 21 sb isarranged with the first end portion 21 sa in the X-direction.

A void SP is provided at a part between the insulating unit 21 and thesecond semiconductor region 12. A part of the void SP is positionedbetween the first end portion 21 sa and the second semiconductor region12. The void SP contacts the first end portion 21 sa. The first endportion 21 sa is exposed in the void SP. In the example, the void SP isnot provided at a portion of the first opposite end portion 21 sb. Thefirst opposite end portion 21 sb contacts the second semiconductorregion 12.

In the embodiment, a position in the X-direction of at least a part ofthe void SP is between the position of the insulating unit 21 and aposition of a part of the first semiconductor region 11 between thesecond semiconductor region 12 and the third semiconductor region 13.

In the example, a drain layer 15, a first source layer 16, a back gatelayer 17, a first contact plug CC1, and a second contact plug CC2 arefurther provided in the semiconductor device 110.

The drain layer 15 is provided on one other part (a fifth region 12 b)of the second semiconductor region 12. The first source layer 16 isprovided on a part (a sixth region 13 p) of the third semiconductorregion 13. The back gate layer 17 is provided on one other part (aseventh region 13 q) of the third semiconductor region 13. The firstsource layer 16 is provided between the second semiconductor region 12and the back gate layer 17 in the X-direction.

The first contact plug CC1 is provided on the drain layer 15. The firstcontact plug CC1 is electrically connected to the drain layer 15. Thesecond contact plug CC2 is provided on the first source layer 16 and onthe back gate layer 17. The second contact plug CC2 is electricallyconnected to the first source layer 16 and the back gate layer 17.

The first conductivity type is, for example, an n-type; and the secondconductivity type is a p-type. The conductivity types may be reversed.Hereinbelow, it is taken that the first conductivity type is the n-type,and the second conductivity type is the p-type.

The drain layer 15 is of the second conductivity type (the p-type). Thefirst source layer 16 is of the second conductivity type (the p-type).The back gate layer 17 is of the first conductivity type (the n-type).

The effective impurity concentration of the second semiconductor region12 is higher than the effective impurity concentration of the firstsemiconductor region 11. The effective impurity concentration of thesecond semiconductor region 12 is lower than the effective impurityconcentration of the drain layer 15. The effective impurityconcentration of the third semiconductor region 13 is higher than theeffective impurity concentration of the first semiconductor region 11.The effective impurity concentration of the third semiconductor region13 is lower than the effective impurity concentration of the firstsource layer 16. The effective impurity concentration of the thirdsemiconductor region 13 is lower than the effective impurityconcentration of the back gate layer 17.

The “effective impurity concentration” corresponds to the concentrationof the impurities contributing to the conduction of the semiconductor.In the case where both an impurity that forms acceptors and an impuritythat forms donors are included, the conductivity due to a part of thetwo impurities is canceled. In such a case, the “effective impurityconcentration” corresponds to the concentrations of the impuritiesexcluding the canceled portion.

In the semiconductor device 110, a voltage (a gate voltage) is appliedto the gate electrode 31. Thereby, an inversion layer is formed in thepart (the third region 11 c) of the first semiconductor region 11positioned under the gate electrode 31. Thereby, the semiconductordevice 110 is switched to an ON state.

In the semiconductor device 110 in the ON state as shown in FIG. 1,electrons EL move from the second semiconductor region 12 toward thethird semiconductor region 13 via an inversion layer (the third region11 c of the first semiconductor region 11). The flow of the electrons ELis controlled by the gate voltage. Switching is performed.

In the case of a reference example in which the void SP is not provided,the electrons EL pass through the vicinity of the first end portion 21sa of the insulating unit 21. The electric field concentrates at thevicinity of the first end portion 21 sa. At this time, the electrons ELare injected into the insulating unit 21 at the vicinity of the firstend portion 21 sa; and there are cases where the electrons EL aretrapped. The path (the current path) in which the electrons EL flowchanges due to the electrons EL being trapped in the insulating unit 21.For example, the ON resistance undesirably increases due to the changeof the current path. In the reference example, there are cases where thecharacteristics change easily and the reliability is low.

Conversely, in the embodiment, the void SP is provided between the firstend portion 21 sa and the second semiconductor region 12. For example,the void SP contacts the first end portion 21 sa. For example, theelectric field concentration at the first end portion 21 sa vicinity issuppressed. For example, the trapping of the electrons EL in theinsulating unit 21 can be suppressed. The change of the current path issuppressed. For example, the increase of the ON resistance can besuppressed; and the fluctuation of the characteristics can be small.High reliability is obtained.

In the case where the void SP is provided, if the size of the void SP islarge, there are cases where the strength of the semiconductor devicedecreases. In the example according to the embodiment, the void SP isprovided at the vicinity of the first end portion 21 sa where theelectric field concentrates easily; and the void SP is not provided atthe other portions. Therefore, in the semiconductor device 110, theincrease of the ON resistance can be suppressed while maintaining highstrength.

In the semiconductor device 110 in the ON state, for example, thecurrent flows between the first contact plug CC1 and the second contactplug CC2. For example, the electrons EL flow from the first contact plugCC1 toward the second contact plug CC2 via the drain layer 15, thesecond semiconductor region 12, the inversion layer (the third region 11c of the first semiconductor region 11), the third semiconductor region13, and the first source layer 16.

In the example (the semiconductor device 110), for example, the firstsemiconductor region 11 is provided on a semiconductor layer 10 b thatis provided on a semiconductor substrate 10 a. The semiconductorsubstrate 10 a includes, for example, silicon. The semiconductorsubstrate 10 a is, for example, a silicon substrate of the secondconductivity type (the p-type). The semiconductor layer 10 b is of thefirst conductivity type (the n-type).

FIG. 2 is a schematic cross-sectional view illustrating anothersemiconductor device according to the embodiment.

In the semiconductor device 111 as shown in FIG. 2, the void SP isprovided under the first end portion 21 sa of the insulating unit 21,under the first opposite end portion 21 sb of the insulating unit 21,and under the region between the end portions. Otherwise, thesemiconductor device 111 is similar to the semiconductor device 110.

The void SP includes, for example, a first void portion SP1, a secondvoid portion SP2, and a third void portion SP3. The position in theX-direction of the first void portion SP1 is between the position of theinsulating unit 21 and the position of the third region 11 c (theportion between the second semiconductor region 12 and the thirdsemiconductor region 13) of the first semiconductor region 11. Thesecond void portion SP2 is positioned under a part of the drain layer15. The third void portion SP3 is positioned between the first voidportion SP1 and the second void portion SP2. The third void portion SP3is positioned under the portion of the insulating unit 21 between thefirst end portion 21 sa and the first opposite end portion 21 sb.

The lower end 21L of the insulating unit 21 contacts the void SP. Inother words, the lower end 21L is exposed in the void SP. The first endportion 21 sa and the first opposite end portion 21 sb contact the voidSP. The first end portion 21 sa and the first opposite end portion 21 sbare exposed in the void SP.

In the semiconductor device 111 as well, the increase of the ONresistance can be suppressed; and the fluctuation of the characteristicscan be small. High reliability is obtained.

An example of a method for manufacturing the semiconductor device 110illustrated in FIG. 1 will now be described.

FIG. 3A to FIG. 3E are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductordevice according to the embodiment.

The semiconductor substrate 10 a of the p-type is prepared as shown inFIG. 3A. The semiconductor layer 10 b of the n-type is formed on thesemiconductor substrate 10 a. For example, an impurity (e.g., antimony,etc.) that forms donors is implanted into the upper part of thesemiconductor substrate 10 a. Thereby, the semiconductor layer 10 b isformed.

A first semiconductor film 11 f is formed on the semiconductor layer 10b. For example, silicon that includes an impurity that forms donors isepitaxially grown on the semiconductor layer 10 b. Thereby, the firstsemiconductor film 11 f is formed. The first semiconductor film 11 fbecomes the first semiconductor region 11 in a subsequent process.

A hole HL is formed in a part of the first semiconductor film 11 f. Forexample, anisotropic etching such as RIE (Reactive Ion Etching) or thelike is performed using a mask. Thereby, the hole HL is formed. Forexample, the hole HL may be multiply formed in the first semiconductorfilm 11 f. For example, the hole HL has a substantially circularcolumnar configuration extending in the Z-direction through the firstsemiconductor film 11 f.

Subsequently, heat treatment is performed in a reducing atmosphere. Forexample, the heat treatment is performed in a hydrogen atmosphere underthe condition of a pressure of 10 Torr. The temperature in the heattreatment is, for example, 1100° C. Thereby, as shown in FIG. 3B,migration of the front surface of the first semiconductor film 11 foccurs. The configuration of the hole HL changes and becomes the voidSP. The void SP is formed inside the first semiconductor film 11 f.

As shown in FIG. 3C, oxygen is partially implanted into the portion ofthe first semiconductor film 11 f including the region on the void SP.Thereby, a part of the first semiconductor film 11 f is oxidized. Asshown in FIG. 3D, the oxidized portion of the first semiconductor film11 f becomes the insulating unit 21.

As shown in FIG. 3E, the gate insulating film 32 is formed on one otherpart of the first semiconductor film 11 f and on a part of theinsulating unit 21. The gate electrode 31 is formed on the gateinsulating film 32.

As shown in FIG. 1, an impurity (e.g., phosphorus, etc.) that formsdonors is ion-implanted into a prescribed region of the firstsemiconductor film 11 f. Thereby, the back gate layer 17 and the thirdsemiconductor region 13 are formed in the prescribed region of the firstsemiconductor film 11 f.

An impurity (e.g., boron, etc.) that forms acceptors is ion-implantedinto a prescribed region of the first semiconductor film 11 f and aprescribed region of the third semiconductor region 13. Thereby, thedrain layer 15 and the second semiconductor region 12 are formed in theprescribed region of the first semiconductor film 11 f. The first sourcelayer 16 is formed in the prescribed region of the third semiconductorregion 13. The first semiconductor film 11 f becomes the firstsemiconductor region 11.

The void SP is positioned between the insulating unit 21 and the secondsemiconductor region 12. For example, a part of the insulating unit 21contacts the void SP. For example, the central portion of the bottomsurface of the insulating unit 21 contacts the second semiconductorregion 12.

In the manufacturing method of the embodiment, the size of the void SPand the location where the void SP is formed can be controlled. In otherwords, the hole HL is formed in the portion of the first semiconductorfilm 11 f including the region where the void SP is to be formed.Subsequently, the void SP is formed in the desired portion by heattreatment. Also, the occurrence of defects in the first semiconductorfilm 11 f (the first semiconductor region 11) is suppressed by formingthe void SP by the heat treatment.

Another first method for manufacturing the semiconductor device 111illustrated in FIG. 2 will now be described.

FIG. 4A to FIG. 4E are schematic cross-sectional views in order of theprocesses, illustrating the other method for manufacturing thesemiconductor device according to the embodiment.

The semiconductor substrate 10 a of the p-type is prepared as shown inFIG. 4A. The semiconductor layer 10 b of the n-type is formed on thesemiconductor substrate 10 a.

The first semiconductor film 11 f is formed on the semiconductor layer10 b. The hole HL is formed in a part of the first semiconductor film 11f. For example, the hole HL may be multiply formed in the firstsemiconductor film 11 f. For example, the hole HL has a substantiallycircular columnar configuration extending in the Z-direction through thefirst semiconductor film 11 f. For example, the number of the holes HLis set to be more than the number in the process shown in FIG. 3A. Thefirst semiconductor film 11 f becomes the first semiconductor region 11in a subsequent process.

Subsequently, heat treatment is performed in a reducing atmosphere. Forexample, the heat treatment is performed in a hydrogen atmosphere underthe condition of a pressure of 10 Torr. The temperature in the heattreatment is, for example, 1100° C. Thereby, as shown in FIG. 4B,migration of the front surface of the first semiconductor film 11 foccurs. The configuration of the hole HL changes and becomes the voidSP. The void SP is formed inside the first semiconductor film 11 f.

As shown in FIG. 4C, oxygen is partially implanted into the firstsemiconductor film 11 f in the region on the void SP. Thereby, a part ofthe first semiconductor film 11 f is oxidized. As shown in FIG. 4D, theoxidized portion of the first semiconductor film 11 f becomes theinsulating unit 21.

As shown in FIG. 4E, the gate insulating film 32 is formed on one otherpart of the first semiconductor film 11 f and on a part of theinsulating unit 21. The gate electrode 31 is formed on the gateinsulating film 32.

As shown in FIG. 2, the first source layer 16, the back gate layer 17,and the third semiconductor region 13 are formed in a prescribed regionof the first semiconductor film 11 f. The drain layer 15 and the secondsemiconductor region 12 are formed in another prescribed region of thefirst semiconductor film 11 f. The first semiconductor film 11 f becomesthe first semiconductor region 11.

The void SP is positioned between the insulating unit 21 and the secondsemiconductor region 12 in the Z-direction. For example, the bottomsurface of the insulating unit 21 contacts the void SP.

In the embodiment, the size of the void SP and the location where thevoid SP is formed can be controlled. In other words, the hole HL isformed in the portion of the first semiconductor region 11 including theregion where the void SP is to be formed. Subsequently, the void SP isformed in the desired portion by heat treatment. The occurrence ofdefects in the first semiconductor film 11 f (the first semiconductorregion 11) are suppressed by forming the void SP by heat treatment.

Another second method for manufacturing the semiconductor device 111will now be described.

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, illustrating another method for manufacturing thesemiconductor device according to the embodiment.

As shown in FIG. 5A, the semiconductor layer 10 b is formed on thesemiconductor substrate 10 a. The semiconductor layer 10 b is formed onthe semiconductor substrate 10 a.

The first semiconductor film 11 f is formed on the semiconductor layer10 b. The first semiconductor film 11 f becomes the first semiconductorregion 11 in a subsequent process.

The hole HL is formed in a part of the first semiconductor film 11 f.For example, the hole HL may be multiply formed in the firstsemiconductor film 11 f. For example, the hole HL has a substantiallycircular columnar configuration extending in the Z-direction through thefirst semiconductor film 11 f.

Subsequently, for example, an impurity that forms acceptors is implantedinto the bottom of the hole HL. Thereby, a fourth semiconductor region12 p is formed between the first semiconductor film 11 f and the bottomof the hole HL.

Heat treatment is performed in a reducing atmosphere. For example, theheat treatment is performed in a hydrogen atmosphere under the conditionof a pressure of 10 Torr. The temperature of the heat treatment is, forexample, 1100° C. Thereby, as shown in FIG. 5B, the hole HL becomes thevoid SP formed inside the first semiconductor film 11 f.

As shown in FIG. 5C, oxygen ions are implanted into a part of the firstsemiconductor film 11 f. Thereby, the insulating unit 21 is formed asshown in FIG. 5D. The insulating unit 21 is formed on the void SP.

As shown in FIG. 5E, the gate insulating film 32 is formed on a part ofthe first semiconductor film 11 f and on a part of the insulating unit21. The gate electrode 31 is formed on the gate insulating film 32.

As shown in FIG. 2, an impurity that forms donors is ion-implanted intoa prescribed region of the first semiconductor film 11 f. Thereby, theback gate layer 17 and the third semiconductor region 13 are formed inthe prescribed region of the first semiconductor film 11 f.

An impurity that forms acceptors is ion-implanted into a prescribedregion of the first semiconductor film 11 f and a prescribed region ofthe third semiconductor region 13. Thereby, the drain layer 15 and thesecond semiconductor region 12 are formed in the prescribed region ofthe first semiconductor film 11 f. At this time, the fourthsemiconductor region 12 p becomes a part (the fourth region 12 a) of thesecond semiconductor region 12. The first source layer 16 is formed inthe prescribed region of the third semiconductor region 13. The firstsemiconductor film 11 f becomes the first semiconductor region 11. Inthe case where the manufacturing is performed using the manufacturingmethod of the embodiment, the effective impurity concentration of thefourth region 12 a is higher than the effective impurity concentrationof the other part (the fifth region 12 b) of the second semiconductorregion 12.

In the manufacturing method, the fourth semiconductor region 12 p ispreformed in the bottom of the hole HL. Subsequently, the secondsemiconductor region 12 is formed in the region including the fourthsemiconductor region 12 p. The fourth semiconductor region 12 p becomesa part of the second semiconductor region 12. Thereby, the impurityconcentration of the second semiconductor region 12 can be set to behigh. The ON resistance can be reduced.

Second Embodiment

FIG. 6 is a schematic plan view illustrating a semiconductor deviceaccording to the embodiment.

FIG. 7 is a schematic cross-sectional view illustrating thesemiconductor device according to the embodiment.

The cross section along line A1-A2 shown in FIG. 6 corresponds to thecross-sectional view shown in FIG. 2. FIG. 7 is a cross-sectional viewillustrating the cross section along line B1-B2 shown in FIG. 6.

As shown in FIG. 6, the insulating unit 21 includes a first insulatingregion 21 a and a second insulating region 21 b. The insulating unit 21is provided to surround the drain layer 15 in the XY plane. The firstinsulating region 21 a is provided along the Y-direction. The secondinsulating region 21 b is provided along the X-direction.

The third semiconductor region 13 includes a first portion 13 a and asecond portion 13 b. The first portion 13 a is separated in theX-direction from the insulating unit 21. The second portion 13 b isseparated in the Y-direction from the insulating unit 21. The thirdsemiconductor region 13 is provided to surround the second semiconductorregion 12 in the XY plane. In FIG. 2, the first source layer 16 and theback gate layer 17 are not illustrated to simplify the drawing.

The gate electrode 31 is disposed to surround the drain layer 15 in theXY plane. The gate electrode 31 includes a first electrode portion 31 athat extends in the Y-direction, and a second electrode portion 31 bthat extends in the X-direction. The first electrode portion 31 a isprovided on the X-direction side of the drain layer 15. The secondelectrode portion 31 b is provided on the Y-direction side of the drainlayer 15.

The first contact plug CC1 is provided on the drain layer 15. The firstcontact plug CC1 is electrically connected to the drain layer 15. Thefirst contact plug CC1 may be multiply provided on the drain layer 15.

The second contact plug CC2 is provided on the first portion 13 a of thethird semiconductor region 13. The second contact plug CC2 may bemultiply provided on the first portion 13 a. As shown in FIG. 6, thesecond contact plug CC2 is electrically connected to the first sourcelayer 16 and the back gate layer 17.

A third contact plug CC3 is provided on the second electrode portion 31b. The third contact plug CC3 is electrically connected to the secondelectrode portion 31 b. The third contact plug CC3 may be multiplyprovided on the second electrode portion 31 b.

As shown in FIG. 2, the void SP is provided between the insulating unit21 and the second semiconductor region 12 in the Z-direction. The firstinsulating region 21 a of the insulating unit 21 includes the first endportion 21 sa and the first opposite end portion 21 sb.

The void SP contacts the first end portion 21 sa. The void SP maycontact the first opposite end portion 21 sb. The void SP and at least apart of the first insulating region 21 a overlap in the Z-direction.

As shown in FIG. 7, the void SP is not provided between the secondinsulating region 21 b and the second semiconductor region 12. Thesecond insulating region 21 b includes a second end portion 21 sc and asecond opposite end portion 21 sd.

The second end portion 21 sc contacts the second semiconductor region12. The second opposite end portion 21 sd contacts the secondsemiconductor region 12.

As shown in FIG. 7, the void is not provided between the secondinsulating region 21 b and the second semiconductor region 12. In thesemiconductor device 120, the second semiconductor region 12 at theperiphery of the second insulating region 21 b substantially is not acurrent path. Accordingly, in this portion, a change of the current pathcaused by a void not being provided does not occur easily. By notproviding the void between the second insulating region 21 b and thesecond semiconductor region 12, for example, collapse of the insulatingunit 21 is suppressed. Accordingly, the strength of the semiconductordevice 120 increases. The increase of the ON resistance can besuppressed while maintaining the strength of the semiconductor device120.

The semiconductor device 120 is manufactured by processes similar tothose of the method for manufacturing the semiconductor device 110according to the first embodiment described above. In the embodiment, bycontrolling the region where the hole HL is formed, the location wherethe void SP is formed and the location where the void SP is not formedcan be designated.

Third Embodiment

FIG. 8 is a schematic cross-sectional view illustrating a semiconductordevice according to a third embodiment.

In the semiconductor device 130 according to the embodiment as shown inFIG. 8, a trench TR is formed in the upper portion of the secondsemiconductor region 12. The insulating unit 21 is provided inside thetrench TR. The insulating unit 21 is positioned between the drain layer15 and the second semiconductor region 12 in the X-direction. The voidSP is formed in a region of a part between the insulating unit 21 andthe second semiconductor region 12.

A part of the void SP is formed at a portion of the trench TR includinga corner TRa formed of the side surface and bottom surface of the trenchTR. The central portion in the X-direction of the bottom surface of theinsulating unit 21 and the second semiconductor region 12 are incontact.

In the embodiment, the void SP exists between the corner TRa and theinsulating unit 21. Thereby, trapping of electrons in the insulatingunit 21 is suppressed. The change of the current path caused by theelectrons being trapped in the insulating unit 21 is suppressed. Theincrease of the ON resistance is suppressed. Accordingly, thereliability of the semiconductor device 130 increases.

A method for manufacturing the semiconductor device 130 according to theembodiment will now be described.

FIG. 9A to FIG. 9D are schematic cross-sectional views in order of theprocesses, illustrating the method for manufacturing the semiconductordevice according to the embodiment.

The semiconductor substrate 10 a is prepared as shown in FIG. 9A. Theconductivity type of the semiconductor substrate 10 a is, for example,the p-type. The semiconductor layer 10 b is formed on the semiconductorsubstrate 10 a.

The first semiconductor film 11 f is formed on the semiconductor layer10 b. The first semiconductor film 11 f becomes the first semiconductorregion 11 in a subsequent process. For example, silicon that includes animpurity that forms donors is epitaxially grown on the semiconductorlayer 10 b. Thereby, the first semiconductor film 11 f is formed. Thetrench TR is formed in a region of a part of the first semiconductorregion 11.

As shown in FIG. 9B, an insulating film 21 f is formed inside the trenchTR at conditions that provide poor coverage. The corner TRa vicinity ofthe bottom of the trench TR is not filled with the insulating film 21 f.Thereby, the void SP is formed in the region including the corner TRa ofthe bottom of the trench TR. Subsequently, CMP (chemical mechanicalpolishing) is performed. At this time, a part of the insulating film 21f remains inside the trench TR. As shown in FIG. 9C, the insulating film21 f that is inside the trench TR becomes the insulating unit 21.

As shown in FIG. 9D, the gate insulating film 32 is formed on a part ofthe first semiconductor film 11 f and on a part on the insulating unit21. The gate electrode 31 is formed on the gate insulating film 32.

Subsequently, as shown in FIG. 8, the drain layer 15 and the secondsemiconductor region 12 are formed in a region of a part of the firstsemiconductor film 11 f. The first source layer 16, the back gate layer17, and the third semiconductor region 13 are formed in a region of oneother part of the first semiconductor region 11. The first semiconductorfilm 11 f becomes the first semiconductor region 11.

The semiconductor device 130 according to the embodiment is manufacturedby the processes recited above.

In these manufacturing processes, the insulating unit 21 is formedinside the trench TR at conditions that provide poor coverage. Thereby,the void SP is formed between the trench TR and the insulating unit 21.The void SP can be formed between the trench TR and the insulating unit21 without increasing the manufacturing processes for forming the voidSP.

According to the embodiments described above, a highly reliablesemiconductor device and a method for manufacturing the semiconductordevice can be realized.

Hereinabove, exemplary embodiments of the invention are described withreference to specific examples. However, the embodiments of theinvention are not limited to these specific examples. For example, oneskilled in the art may similarly practice the invention by appropriatelyselecting specific configurations of components included insemiconductor devices from known art. Such practice is included in thescope of the invention to the extent that similar effects thereto areobtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor devices, and methods for manufacturing thesame practicable by an appropriate design modification by one skilled inthe art based on the semiconductor devices and methods for manufacturingthe same described above as embodiments of the invention also are withinthe scope of the invention to the extent that the spirit of theinvention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor device, comprising: a firstsemiconductor region of a first conductivity type; a secondsemiconductor region of a second conductivity type provided on a firstpart of the first semiconductor region, a drain being provided on afirst part of the second semiconductor region; a third semiconductorregion of the first conductivity type provided on a second part of thefirst semiconductor region, a source being provided on a part of thethird semiconductor region, the drain and the source being spaced fromeach other in a first direction; an insulating unit provided on a secondpart of the second semiconductor region adjacent to the first part ofthe second semiconductor region; a void provided at a position lower ina second direction crossing the first direction than a lowest portion ofthe insulating unit in the second direction; a gate insulating filmprovided on a third part of the first semiconductor region between thesecond semiconductor region and the third semiconductor region in thefirst direction; and a gate electrode provided on the gate insulatingfilm, wherein a position along the first direction for at least a partof the void is between an edge position of the insulating unit under thegate electrode in the second direction and an edge position of the thirdsemiconductor region along the first direction, and a central part ofthe insulating unit along the first direction between a first endportion and a second end portion is in direct contact with the secondsemiconductor region.
 2. The semiconductor device according to claim 1,wherein a first end portion of the insulating unit along the firstdirection contacts the void and the first end portion of the insulatingunit is under the gate electrode in the second direction.
 3. Thesemiconductor device according to claim 2, wherein a second end portionof the insulating unit along the first direction opposite to the firstend portion contacts the second semiconductor region.
 4. Thesemiconductor device according to claim 2, wherein a second end portionof the insulating unit along the first direction opposite to the firstend portion is adjacent to the void in the second direction.
 5. Thesemiconductor device according to claim 1, wherein a part of the void isbetween the central part of the insulating unit and the secondsemiconductor region in the second direction.
 6. The semiconductordevice according to claim 1, wherein an impurity concentration of a partof the second semiconductor region at a lower part of the void is higherthan an impurity concentration of another part of the secondsemiconductor region.
 7. A semiconductor device, comprising: a firstsemiconductor region of a first conductivity type; a secondsemiconductor region of a second conductivity type provided on a firstpart of the first semiconductor region, a drain being provided on afirst part of the second semiconductor region; a third semiconductorregion provided on a second part of the first semiconductor region, asource being provided on a part of the third semiconductor region, thesource and the drain being spaced from each other in a first direction;an insulating unit provided on a second part of the second semiconductorregion that is adjacent to the first part of the second semiconductorregion; a gate insulating film provided on a third part of the firstsemiconductor region between the second semiconductor region and thethird semiconductor region in the first direction; and a gate electrodeprovided above the gate insulating film in a second direction, whereinthe insulating unit has a first end portion below the gate electrode inthe second direction and a second end portion on a drain end side of theinsulating unit in the first direction, the first end portion contacts avoid provided between the insulating unit and the second semiconductorregion in the second direction, the void being lower than a bottommostportion of the insulating unit in the second direction, the bottom beinga lowest portion of the insulating unit, and a lower surface of theinsulating unit at the second end portion directly contacts the secondsemiconductor region.
 8. The semiconductor device according to claim 7,wherein a lower surface of the insulating unit at the second end portiondirectly contacts the void.
 9. A semiconductor device, comprising: afirst semiconductor region of a first conductivity type; a secondsemiconductor region of a second conductivity type provided on a firstpart of the first semiconductor region, a drain being provided on afirst part of the second semiconductor region; a third semiconductorregion provided on a second part of the first semiconductor region, asource being provided on a part of the third semiconductor region, thesource and the drain being spaced from each other in a first direction;an insulating unit provided on a second part of the second semiconductorregion that is adjacent to the first part of the second semiconductorregion; a gate insulating film provided on a third part of the firstsemiconductor region between the second semiconductor region and thethird semiconductor region in the first direction; and a gate electrodeprovided above the gate insulating film in a second direction, whereinthe insulating unit has a first end portion below the gate electrode inthe second direction and a second end portion on a drain end side of theinsulating unit in the first direction, the first end portion contacts avoid provided between the insulating unit and the second semiconductorregion in the second direction, the void being lower than a bottommostportion of the insulating unit in the second direction, the bottom beinga lowest portion of the insulating unit, and a central portion of theinsulating unit between the first and second end portions in the seconddirection directly contacts the second semiconductor region.
 10. Thesemiconductor device according to claim 7, wherein a part of the void islocated between the second semiconductor region and the central portionof the insulating unit that is between the first and second end portionsin the second direction.
 11. The semiconductor device according to claim7, wherein an impurity concentration of a part of the secondsemiconductor region at a lower part of the void is higher than animpurity concentration of another part of the second semiconductorregion.